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THIN LAYER TRANSFER METHOD WHEREIN A CO-IMPLANTATION STEP IS PERFORMED ACCORDING TO CONDITIONS AVOIDING BLISTERS FORMATION AND LIMITING ROUGHNESS

IP.com Disclosure Number: IPCOM000083333D
Publication Date: 2005-Mar-01

Publishing Venue

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Abstract

The invention proposes a method for producing a structure comprising a thin layer of semiconductor material on a substrate, comprising the steps of: - performing a co-implantation of at least two different species under a face of a donor substrate from which the thin layer must be made, so as to create an embrittlement zone in the thickness of the donor substrate, - placing the face of the donor substrate into close contact with a support substrate, after it has undergone implantation, - detaching the donor substrate at the level of the embrittlement zone, so as to transfer a part of the donor substrate onto the support substrate and to form the thin layer on the latter, at least a first species being implanted acting essentially chemically for forming platelet-like defects in the donor substrate, at least a second species being implanted acting essentially physically as a source of internal pressure in the implanted donor substrate for providing stress in said defects, each of said first and second species being respectively distributed in the thickness of the donor substrate according to a repartition profile presenting a spreading zone wherein the species is mainly distributed and presents a maximum concentration peak, the method being characterised in that the co-implantation step is performed according to co-implantation conditions according to which the implantation energies of said first and second species are selected such that said second species peak is located in the thickness of the donor substrate within said embrittlement zone and more in-depth than said first species spreading zone, and the implantation doses of said first and second species are selected to be substantially similar, the first species implantation dose counting from 40% to 60% of the total implantation dose.

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THIN LAYER TRANSFER METHOD WHEREIN A CO-IMPLANTATION STEP IS PERFORMED ACCORDING TO CONDITIONS AVOIDING BLISTERS FORMATION AND LIMITING ROUGHNESS

ABSTRACT

The invention proposes a method for producing a structure comprising a thin layer of semiconductor material on a substrate, comprising the steps of:

Ÿ       performing a co-implantation of at least two different species under a face of a donor substrate from which the thin layer must be made, so as to create an embrittlement zone in the thickness of the donor substrate,

Ÿ       placing the face of the donor substrate into close contact with a support substrate, after it has undergone implantation,

Ÿ       detaching the donor substrate at the level of the embrittlement zone, so as to transfer a part of the donor substrate onto the support substrate and to form the thin layer on the latter,

at least a first species being implanted acting essentially chemically for forming platelet-like defects in the donor substrate, at least a second species being implanted  acting essentially physically as a source of internal pressure in the implanted donor substrate for providing stress in said defects, each of said first and second species being respectively distributed in the thickness of the donor substrate according to a repartition profile presenting a spreading zone wherein the species is mainly distributed and presents a maximum concentration peak, the method being characterised in that the co-implantation step is performed according to co-implantation conditions according to which the implantation energies of said first and second species are selected such that said second species peak is located in the thickness of the donor substrate within said embrittlement zone and more in-depth than said first species spreading zone, and the implantation doses of said first and second species are selected to be substantially similar, the first species implantation dose counting from 40% to 60% of the total implantation dose.

The present invention relates to a method for producing a structure comprising a thin layer of semiconductor material on a substrate, comprising the steps consisting in:

Ÿ         carrying out implantation of species under a face of a donor substrate from which the thin layer must be made, so as to create an embrittlement zone in the thickness of the donor substrate,

Ÿ         placing the face of the donor substrate into close contact with a support substrate, after it has undergone implantation,

Ÿ         detaching the donor substrate at the level of the embrittlement zone, so as to transfer a part of the donor substrate onto the support substrate and to form the thin layer on the latter.

The invention relates more precisely to the above-mentioned implantation step.

SMARTCUT® type processes, for which more ample details can be found in the document ‘Silicon-On-Insulator Technology: Materials to VLSI, 2nd Edition’, by Jean-Pierre Colinge from Kluwer Academic Publishers, pp. 50 and 51, are an example of methods of the...