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Recovery of FET Characteristics After Electron Injection into Gate Dielectric

IP.com Disclosure Number: IPCOM000083344D
Original Publication Date: 1975-May-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gangatirkar, PD: AUTHOR

Abstract

Under normal operating conditions, certain metal-oxide semiconductor field-effect transistor (MOSFET) devices may have their transfer and output characteristics altered by injection of hot electrons into the gate dielectric. Although partial recovery of device characteristics may be obtained by applying high positive (for N-channel devices) gate to substrate voltages, the characteristics remain distorted.

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Recovery of FET Characteristics After Electron Injection into Gate Dielectric

Under normal operating conditions, certain metal-oxide semiconductor field- effect transistor (MOSFET) devices may have their transfer and output characteristics altered by injection of hot electrons into the gate dielectric. Although partial recovery of device characteristics may be obtained by applying high positive (for N-channel devices) gate to substrate voltages, the characteristics remain distorted.

Full recovery of the device characteristics may be obtained by intentionally causing avalanching of the drain/substrate PN junction which causes injection of positive charge in the gate dielectric, effectively eliminating the effects of the hot electrons. The avalanche condition is caused by ramping the drain-to-substrate voltage from zero volts to cause avalanche, while holding the gate voltage at ground.

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