Browse Prior Art Database

High Speed Mechanical Scanner for Ion Implantation

IP.com Disclosure Number: IPCOM000083383D
Original Publication Date: 1975-May-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 2 page(s) / 63K

Publishing Venue

IBM

Related People

Kranik, JR: AUTHOR [+3]

Abstract

This mechanical scanner for fixed ion beams uses the concept of amplification through four linkages to achieve high speed ( > 2.50 cm per sec) good uniformity (98%), and is compatible with automatic wafer handling equipment to satisfy high-throughput production needs.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

High Speed Mechanical Scanner for Ion Implantation

This mechanical scanner for fixed ion beams uses the concept of amplification through four linkages to achieve high speed ( > 2.50 cm per sec) good uniformity (98%), and is compatible with automatic wafer handling equipment to satisfy high-throughput production needs.

A process chamber 9 is shown where a wafer mounting platform 3 is resting on four thin-walled metallic legs 2 (wands). The wands project from the vacuum environment through to the ambient by a high-vacuum swivel seal 4 and is then connected to a suitable drive system 5, to achieve a linear scan velocity.

The ion beam 1 passes centrally by the wands 2 and impinges on the wafer 6 and platform assembly at a constant angle. The wand spacing allows sufficient clearance as to effect accurate dosimetry elements 7, in combination with wafer biasing 10.

The carrier structure 8 permits clamping of a 0.4 mm thick silicon wafer against approximately 80g's acceleration.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]