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Browse Prior Art Database

Boron Passivation of Silicon

IP.com Disclosure Number: IPCOM000083446D
Original Publication Date: 1975-May-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cherry, A: AUTHOR [+2]

Abstract

Silicon elements used for fluid handling are subject to erosion by fluids having a PH of 8 or greater. Such elements may be formed by photolithography and etching.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Boron Passivation of Silicon

Silicon elements used for fluid handling are subject to erosion by fluids having a PH of 8 or greater. Such elements may be formed by photolithography and etching.

After formation, P-type silicon elements may be passivated by subjecting the areas which will contact the fluid to boron diffusion.

This establishes a surface region resistant to erosion or etching by high PH fluids.

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