Browse Prior Art Database

Selective Open Tube Arsenic Diffusion

IP.com Disclosure Number: IPCOM000083571D
Original Publication Date: 1975-Jun-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Briska, M: AUTHOR [+3]

Abstract

When arsenic is diffused into a silicon substrate from a solid source deposited on the substrate, a diffusion mask 2 is placed on substrate wafer 1 and holes 3 are opened for diffusion. From a solution containing arsenic ions, arsenic 4 is electrochemically deposited in the openings 3 only.

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Selective Open Tube Arsenic Diffusion

When arsenic is diffused into a silicon substrate from a solid source deposited on the substrate, a diffusion mask 2 is placed on substrate wafer 1 and holes 3 are opened for diffusion. From a solution containing arsenic ions, arsenic 4 is electrochemically deposited in the openings 3 only.

The arsenic source is encapsulated by sputtering a 2000 to 20000 Angstroms thick layer of silicon dioxide 5 at a temperature of 160 degrees C. The structure is then heated to 1000 to 1100 degrees C to drive the arsenic into substrate wafer 1 to form diffusion region 6. Example: Thickness of arsenic layer 4: 200 angstroms. Thickness of sputtered silicon dioxide 5: 3000 angstroms. Diffusion: 70 min at 1080 degrees C. Arsenic concentration after diffusion: 4 x 10/16/ at/cm/2/. Depth of penetration: 0.95 mu. Resistivity: 30 omega/ [].

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