Browse Prior Art Database

Developer for Electron Beam Resist Process

IP.com Disclosure Number: IPCOM000083702D
Original Publication Date: 1975-Jul-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Schmidt, PR: AUTHOR

Abstract

A mixture of two or more nonsolvents for acrylate resist layers provides for rapid development with high exposed-to-unexposed resist speed ratios.

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Developer for Electron Beam Resist Process

A mixture of two or more nonsolvents for acrylate resist layers provides for rapid development with high exposed-to-unexposed resist speed ratios.

Resist layers of an acrylate polymer such as polymethyl methacrylate are used to form relief images on a substrate. The layers are exposed patternwise to degrading radiation, such as a scanning electron beam.

The exposed areas are then removed by a solvent development using a mixture of nonsolvents for the resist. For example, a mixture of equal parts by weight of methyl alcohol and n-amyl acetate.

Each solvent taken alone would require about an hour to develop through a 6,500 angstrom thick resist layer, exposed to a 25 KV electron beam at 150 nanoamps for two microseconds. The developer mixture, on the other hand, develops the layer in two minutes with a most favorable ratio of exposed resist removal to unexposed resist removal.

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