Browse Prior Art Database

Elemental Arsenic Silicon Compounds for Ion Implant Source Materials

IP.com Disclosure Number: IPCOM000083721D
Original Publication Date: 1975-Jul-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

DeFries, RM: AUTHOR

Abstract

Present day ion implant applications use an elemental arsenic source material (N-type) heated within the source chamber to generate ions towards a hot cathode, where they are accelerated to the target area. Elemental arsenic has a high-vapor pressure which necessitates thermal control with a temperature around 200 degrees C. Deviations of vapor pressure are monitored for slight changes in temperature controlling factors.

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Elemental Arsenic Silicon Compounds for Ion Implant Source Materials

Present day ion implant applications use an elemental arsenic source material (N-type) heated within the source chamber to generate ions towards a hot cathode, where they are accelerated to the target area. Elemental arsenic has a high-vapor pressure which necessitates thermal control with a temperature around 200 degrees C. Deviations of vapor pressure are monitored for slight changes in temperature controlling factors.

The use of elemental arsenic-silicon compounds as an alternate N-type ion implant source material, lowers the vapor pressure curve slope as a function of temperature. Arsenic ions are released from the compound at a controllable rate within the desirable 600-900 degrees C thermal operating range.

Ease in fabrication, handling and controlling the excessive amounts of arsenic within an ion implant process, reduce the standards established by the Occupational Safety and Health Administration (OSHA).

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