Browse Prior Art Database

Six Device Dynamic Associative Memory Cell

IP.com Disclosure Number: IPCOM000083752D
Original Publication Date: 1975-Jul-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Bankowski, WF: AUTHOR

Abstract

This six-device cell can be associatively interrogated.

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Six Device Dynamic Associative Memory Cell

This six-device cell can be associatively interrogated.

In the quiescent state both B0 and B1 bit lines and interrogation (INT) line are at some positive potential +V, while the W/L word line is at ground potential. In this quiescent state, information is stored in a cell Q2, Q3 by stored charge in the internal node capacitances C2 and C3. Since the charge stored in capacitors C2 and C3 leaks off with time, it is necessary that the information be regenerated or it will be lost. Regeneration is performed by taking the word line to some positive potential, thereby momentarily turning on devices Q1 and Q4 and restoring the information at the internal nodes.

Reading is nondestructive and is performed by taking the word line to some positive potential to turn on devices Q1 and Q4, as during regeneration. Depending on the state of the cell, current will flow from either of the bit lines B0, B1. A sense amplifier located at either bit line will then determine the state of the cell,.by the presence or absence of sense current. It should be noted here that the read operation regenerates the cell in the same manner as a regeneration operation.

Writing is performed by taking either of the bit lines to ground and simultaneously taking the word line to some positive potential. If a "1" is to be written into this cell the B1 bit line is set to ground, while the word line set to a positive voltage. If a "0" is desired, the B0 line is l...