Browse Prior Art Database

Natural LSI Process Step to Create Controllable Boiling Centers

IP.com Disclosure Number: IPCOM000083821D
Original Publication Date: 1975-Jul-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Miersch, EF: AUTHOR

Abstract

A method for improved heat transfer from a silicon to a liquid coolant in a large-scale integration (LSI) process is provided, by increasing the surface area of the device and simultaneously creating nucleation centers thereon.

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Natural LSI Process Step to Create Controllable Boiling Centers

A method for improved heat transfer from a silicon to a liquid coolant in a large-scale integration (LSI) process is provided, by increasing the surface area of the device and simultaneously creating nucleation centers thereon.

The undersurface of the silicon wafer 1 is covered with a metal layer 2, and a regular array of via holes 3 is etched in metal layer 2. An isotropic etchant is then used to create the nucleate boiling centers 4.

By varying the via holes 3 diameter D, the thickness a of the metal layer 2, and the depth h of centers 4, the bubble diameter d can be varied to obtain optimal heat flux to the.cooling system.

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