Browse Prior Art Database

Ion Implant Spot Size and Uniformity Monitor

IP.com Disclosure Number: IPCOM000083839D
Original Publication Date: 1975-Aug-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Keenan, WA: AUTHOR [+4]

Abstract

Ion-implantation techniques utilized in the manufacture of silicon integrated semiconductor circuits, require a monitor of area size being irradiated and the intensity to the dose.

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Ion Implant Spot Size and Uniformity Monitor

Ion-implantation techniques utilized in the manufacture of silicon integrated semiconductor circuits, require a monitor of area size being irradiated and the intensity to the dose.

It has been found that a thin film of aluminum nitride of approximately between 100 degrees and 800 degrees will suffice to indicate a beam spot color change, in a manner to allow an operator to determine the beam size. By observing the intensity of the color change from blue to purple, a qualitative indication of the dose or intensity of the beam can be observed.

This type of measurement is suitable for in-line gross monitoring of process conditions using ion implantation.

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