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Schottky Barrier Diode

IP.com Disclosure Number: IPCOM000083889D
Original Publication Date: 1975-Aug-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Tuman, D: AUTHOR

Abstract

Schottky barrier diodes (SBD) may be fabricated from various metals to form the anode of the diode, depending on the particular barrier potential desired. PtSi, Al, Cr are examples of typical SBD anode metallurgies.

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Schottky Barrier Diode

Schottky barrier diodes (SBD) may be fabricated from various metals to form the anode of the diode, depending on the particular barrier potential desired. PtSi, Al, Cr are examples of typical SBD anode metallurgies.

In the fabrication of large-scale integrated circuit structures, if the selected anode metallurgy is different from the chip interconnection metallurgy (personalization), special or additional processing is required to achieve the desired electrical characteristics. For example, if PtSi is the metallurgy of the Schottky diode and the personalization metallurgy is Al-Cu, another metal such as Cr is required to serve as a barrier between the two.

The structure shown in the figure eliminates the need for a Cr barrier. The structure is a standard integrated circuit SBD, except that a portion of the P- guard ring region of the anode area is passivated by silicon dioxide and a contact opening is made to the guard ring. An aluminum contact is made to this area of the anode which does not contact the PtSi anode.

Electrical conduction is through the Al-Cu stripe to the P-guard ring contact, and horizontally along the P guard ring to the SBD anode and through the silicon to the cathode.

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