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Vacuum Bake Photoresist Preparation for High-Energy, High Dose Ion Implantation

IP.com Disclosure Number: IPCOM000083917D
Original Publication Date: 1975-Aug-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Mayone, JM: AUTHOR

Abstract

A process for providing a dense, ion resistant and enhanced adhesion photoresist is described in a publication entitled "Photoresist Cross-Linked With a Thermal Free-Radical Initiator For Use As An Ion implant Mask", IBM Technical Disclosure Bulletin, Vol. 17, No. 1, June 1974, page 85.

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Vacuum Bake Photoresist Preparation for High-Energy, High Dose Ion Implantation

A process for providing a dense, ion resistant and enhanced adhesion photoresist is described in a publication entitled "Photoresist Cross-Linked With a Thermal Free-Radical Initiator For Use As An Ion implant Mask", IBM Technical Disclosure Bulletin, Vol. 17, No. 1, June 1974, page 85.

That publication describes the addition of benzoyl peroxide to the photoresist, followed by post baking at a relatively high temperature, about 210 degrees C, for about 20 minutes. While this treatment yields the desired tough coating, the high-baking temperature results in a degree of reflow during the baking step which is undesirable in many cases.

It has been found that reflow of the photoresist during the baking process can be reduced, and thus finer detail can be retained in the resultant mask, by baking at a lower temperature under a vacuum. A bake at 125 degrees C under vacuum for about 16 hours (overnight) provides the desired improvement. Benzoyl peroxide begins to decompose at about 100 degrees C and, therefore, this lower temperature is enough to initiate thorough cross-linking of the photoresist polymer, while avoiding the reflow experienced at higher temperatures.

This treatment is of particular utility, for example, in a process for ion implantation of /31/P conducted at 150 kev with a dosage of 5 x 10/15/ ions/cm/2/. Under these conditions untreated photoresist has a tendency to outgas r...