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Method to Produce High T(c) Superconducting Thin Films of V(3)Si

IP.com Disclosure Number: IPCOM000083983D
Original Publication Date: 1975-Aug-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kircher, CJ: AUTHOR [+3]

Abstract

A method for fabricating a uniform, smooth, high T superconducting thin film is described. Such a film is suitable, for example, as a ground plane for Josephson-junction circuits. When patterned, it could be useful for interconnections or electrodes.

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Method to Produce High T(c) Superconducting Thin Films of V(3)Si

A method for fabricating a uniform, smooth, high T superconducting thin film is described. Such a film is suitable, for example, as a ground plane for Josephson-junction circuits. When patterned, it could be useful for interconnections or electrodes.

Thin films of V(3)Si (Bulk T(c) = 17 degrees K) are prepared as follows: (1) A layer of SiO(X) (where X approx. 1) is formed on a suitable substrate, e.g., by evaporation in vacuum. (2) A layer of V is deposited over the SiO. If a patterned film is desired, the V may be subtractively etched at this point, using a photoresist mask. (3) A heat treatment (900 degrees C, 1 hr.) is carried out in an oxygen-free ambient (e.g., pure He) to form V(3)Si.

Such films of V(3)Si are smooth, adherent to the substrate and free of any significant surface oxide, in contrast with the results obtained from the reaction of V with Si or SiO(2). A T(C) of > 13 degrees K on such films has been measured. Because of this high T(C), this material has application with superconducting magnets. References
1. K. N. Tu, J. F. Ziegler and C. J. Kircher, "Interaction of V

with Bare and Oxidized Si Wafers", Appl. Phys. Lett.,

(11/73).

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