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All Amorphous Film Single Level Masking Bubble Devices and Fabrication Method

IP.com Disclosure Number: IPCOM000083988D
Original Publication Date: 1975-Aug-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR

Abstract

Bubble devices require, as shown in Fig. 1, a film to support bubbles, a spacer to break up exchange coupling between the bubble film and the overlay structure, and a soft magnetic film for the propagation of bubbles and the sensing of bubbles.

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All Amorphous Film Single Level Masking Bubble Devices and Fabrication Method

Bubble devices require, as shown in Fig. 1, a film to support bubbles, a spacer to break up exchange coupling between the bubble film and the overlay structure, and a soft magnetic film for the propagation of bubbles and the sensing of bubbles.

The left side of Fig. 1 shows the present structure utilizing NiFe as the overlay, where the sensing of bubbles is accomplished by use of magnetoresistive properties. The right side of Fig. 1 shows a new structure and materials to perform the same functions; sensing is done by use of the transverse Hall effect which is schematically shown in Fig. 2. Amorphous film 2 is etched into a rectangular shape and a current I is sent through the detector. The magnetic field H is perpendicular to the sensor plane, and is supplied by the bubbles.

A sense signal, VH, of the order of 0.5 volt can be obtained by energizing the sensor with 10 ma current.

Amorphous GdCoX films can be fabricated with various magnetic properties by changing the sputtering parameters. Films with useful bubble properties can be deposited with a certain bias voltage, for example at 80 volts, while films with very soft, in-plane magnetization can be grown from the same target but with different bias voltage, for example 50 volts. In one sputtering run, for example, an amorphous film with H(c) of 0.5 0e, equivalent permalloy thickness of 3700 Angstroms, and with a square-hysteresis loop...