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Browse Prior Art Database

Semiconductive And Stoichiometric TiS(2)

IP.com Disclosure Number: IPCOM000083991D
Original Publication Date: 1975-Aug-01
Included in the Prior Art Database: 2005-Mar-01
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Fern, RE: AUTHOR [+2]

Abstract

A method is provided for synthesizing compound TiS(2) as a semiconductor by reduction, with stochiometry whose formation has not been achievable by vapor growth technique.

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Semiconductive And Stoichiometric TiS(2)

A method is provided for synthesizing compound TiS(2) as a semiconductor by reduction, with stochiometry whose formation has not been achievable by vapor growth technique.

Stochiometric TiS(2) has been synthesized with semiconducting properties with a setup, as illustrated by Fig. 1. The reducing technique uses H(2)S as the reducing agent and sputtered Ti is the metal to be reduced. The previous method of preparation, that is, the vapor growth technique, yielded a metallic compound rich in titanium Ti(x)S(2)(x > 1).

The optical band gap is approx. 1.03 ev. The resistivity and optical absorption curves of both the vapor growth (Ti rich) sample and the sample produced with H(2)S are contrasted in Figs. 2 and 3, respectively.

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