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Inducing Uniaxial Anisotropy in NiFe Films

IP.com Disclosure Number: IPCOM000084136D
Original Publication Date: 1975-Sep-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR

Abstract

During the fabrication of bubble domain devices by single level masking processes, the NiFe overlays used for propagation and sensing of the domains require uniaxial anisotropy.

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Inducing Uniaxial Anisotropy in NiFe Films

During the fabrication of bubble domain devices by single level masking processes, the NiFe overlays used for propagation and sensing of the domains require uniaxial anisotropy.

Rather than providing a set of field coils for providing an in-plane field to induce this anisotropy, it is proposed to use the radial field gradient of the perpendicular (z) field to induce the required uniaxial anisotropy. Therefore, only one set of field coils is required as shown in Fig. 1. The perpendicular z-field intensifies the sputtering plasma and increases the sputtering rate, while at the same time inducing the required uniaxial anisotropy.

Films deposited without a z-field have no anisotropy or random distribution of easy axis, while those prepared in the presence of a perpendicular z-field have a well-defined easy axis with radial distribution, as shown in Fig. 2. The lack of anisotropy in the center sample (C) indicates that the radial gradient in z-field is required for inducing the proper uniaxial anisotropy.

In the fabrication of bubble devices using amorphous magnetic films and single-level processing, plated NiFe films are generally not suitable because of nonuniform composition, thickness, and low-magnetoresistive properties. On the other hand, evaporated NiFe films generally have poor adhesion when deposited at low temperature, and such low temperatures are necessary when processing is in the presence of amorphous films. The...