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Pb Alloy Films With High Resistance Against Stress Relaxation

IP.com Disclosure Number: IPCOM000084173D
Original Publication Date: 1975-Sep-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Lahiri, SK: AUTHOR

Abstract

For many applications of thin films it is required that stress relaxation during fabrication, storage, operation, etc. of devices consisting of such films be inhibited or minimized. For example, hillock and whisker growths, which occur due to stress relaxation, in Pb films or some Pb alloy films can destroy the tunneling barrier (insulation) of a Josephson tunneling device during fabrication or thermal cycling. It is proposed that Pb alloy films containing In and Ag, or In and Sb, or Cu and In be used when stress relaxation are to be minimized.

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Pb Alloy Films With High Resistance Against Stress Relaxation

For many applications of thin films it is required that stress relaxation during fabrication, storage, operation, etc. of devices consisting of such films be inhibited or minimized. For example, hillock and whisker growths, which occur due to stress relaxation, in Pb films or some Pb alloy films can destroy the tunneling barrier (insulation) of a Josephson tunneling device during fabrication or thermal cycling. It is proposed that Pb alloy films containing In and Ag, or In and Sb, or Cu and In be used when stress relaxation are to be minimized.

Experimentally it has been found that Pb-In-Ag layered films (deposited with various solute concentration and in various sequences), which are though to interdiffuse substantially at room temperature in very short time (~ an hour), do not grow hillocks or whiskers when heated to 100 degrees C or cycled repeatedly between room temperature and -196 degrees C.

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