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Cleaning Polishing Pads

IP.com Disclosure Number: IPCOM000084256D
Original Publication Date: 1975-Oct-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Basi, JS: AUTHOR [+2]

Abstract

When a cupric ion polishing technique is used in the chemical/mechanical polishing of silicon, large amounts of metallic copper are produced. Most of this metallic copper remains on the polishing pad, detrimentally affecting the wafer (substrate) quality and reducing the yield of devices fabricated on these substrates. As the need for high density semiconductor devices increases, physical (mechanical) damage in the substrate becomes more evident.

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Cleaning Polishing Pads

When a cupric ion polishing technique is used in the chemical/mechanical polishing of silicon, large amounts of metallic copper are produced. Most of this metallic copper remains on the polishing pad, detrimentally affecting the wafer (substrate) quality and reducing the yield of devices fabricated on these substrates. As the need for high density semiconductor devices increases, physical (mechanical) damage in the substrate becomes more evident.

One method of cleaning the polishing pads is to uniformly add approximately 200 ml (10:1) of aqueous CuCl(2) into the polishing pad. The pad is soaked for approximately 5 minutes and then rinsed with DI water.

Note is made that if larger quantities of CuCl(2) are used, undesirable effects on wafer surfaces can result because the polishing cloths tend to absorb the CuCl(2). During polishing, the CuCl(2) releases gradually, which can cause pits or surface texture.

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