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Nondestructively Measuring the Thickness of Si Layers

IP.com Disclosure Number: IPCOM000084273D
Original Publication Date: 1975-Oct-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bohg, A: AUTHOR [+2]

Abstract

Two radiations with photon energies lying within the absorption edge of the material of the layer to be measured, are directed either simultaneously or successively, via a microscope, onto a selected small area of an Si layer.

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Nondestructively Measuring the Thickness of Si Layers

Two radiations with photon energies lying within the absorption edge of the material of the layer to be measured, are directed either simultaneously or successively, via a microscope, onto a selected small area of an Si layer.

The light exciting this layer is directed onto one or more photodetectors, in order to define the ratio of its transmissivity for the two radiations. This ratio, which, for example, for a 5 mu Si layer and two radiations having photon energies of 2.1 and 2.5 eV, respectively, equals 12.2, is an exact indication of the thickness of the layer.

The method is applicable to layer thicknesses from 1 to 10 mu. The lateral resolution is 1 mu/2/.

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