Browse Prior Art Database

Photovoltaic Devices Using Transparent Contacts

IP.com Disclosure Number: IPCOM000084316D
Original Publication Date: 1975-Oct-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Hovel, HJ: AUTHOR [+2]

Abstract

This is a photovoltaic device having an n-type transparent layer [SnO(2), In(2)O(3), (SnO(2):In(2)O(3)), (SnO(2): Sb(2)O(3))] on a p-type surface of a PN junction in a semiconductor (Si, GaAs, InP, etc.). The n-type transparent layer on a p-type surface acts as a tunnel ohmic contact and not as a rectifying contact as would be expected. (Image Omitted)

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Photovoltaic Devices Using Transparent Contacts

This is a photovoltaic device having an n-type transparent layer [SnO(2), In(2)O(3), (SnO(2):In(2)O(3)), (SnO(2): Sb(2)O(3))] on a p-type surface of a PN junction in a semiconductor (Si, GaAs, InP, etc.). The n-type transparent layer on a p-type surface acts as a tunnel ohmic contact and not as a rectifying contact as would be expected.

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