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Inhibition of Hillock Formation in Pb Films

IP.com Disclosure Number: IPCOM000084333D
Original Publication Date: 1975-Oct-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Lahiri, SK: AUTHOR

Abstract

Hillock formation is detrimental for devices made of thin films, such as Josephson tunneling devices. In order to inhibit hillock formation in devices utilizing Pb films, it is proposed to deposit the Pb onto a composite comprising Sb and Cd layers.

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Inhibition of Hillock Formation in Pb Films

Hillock formation is detrimental for devices made of thin films, such as Josephson tunneling devices. In order to inhibit hillock formation in devices utilizing Pb films, it is proposed to deposit the Pb onto a composite comprising Sb and Cd layers.

As an example, 100 angstrom layers of Sb and Cd are deposited on a substrate, after which a Pb film is deposited as a base electrode. This base electrode is then oxidized to form a tunnel barrier, after which a counter electrode is formed. This provides a Josephson tunneling device which will resist hillock formation when subjected to thermal cycling between cryogenic temperatures and room temperatures.

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