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Ferromagnetic Insulating Films (EuO; Eus) for Miniaturized Josephson Tunneling Memory Loop Cells

IP.com Disclosure Number: IPCOM000084334D
Original Publication Date: 1975-Oct-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Anacker, W: AUTHOR

Abstract

Miniaturization of memory cells in Josephson tunneling technology is limited by the need to provide loops with sufficient inductance, to store at least a single magnetic flux quantum when the circulating current is less than the Josephson threshold of write gates, and to provide proper damping during current transfer. Sufficient inductance is usually provided by a loop having a sufficiently long length.

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Ferromagnetic Insulating Films (EuO; Eus) for Miniaturized Josephson Tunneling Memory Loop Cells

Miniaturization of memory cells in Josephson tunneling technology is limited by the need to provide loops with sufficient inductance, to store at least a single magnetic flux quantum when the circulating current is less than the Josephson threshold of write gates, and to provide proper damping during current transfer. Sufficient inductance is usually provided by a loop having a sufficiently long length.

To reduce the required length of loops while maintaining sufficient inductance through ferromagnetic insulating thin films with low Curie temperature, EuO or EuS can be used between ground plane and/or the loop lines. Although it is recognized that the relative permeability mu/r/ is low at the short current transfer times in such loops, a mu/r/ = 5 to 10 will suffice for substantial reduction of loop length and, as a consequence, of required memory loop cell area.

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