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Reduction of Leakage in SiO(2) Grown on Silicon Films

IP.com Disclosure Number: IPCOM000084340D
Original Publication Date: 1975-Oct-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fowler, AB: AUTHOR

Abstract

The leakage of electrons through oxides grown on polycrystalline silicon is unacceptable in device fabrication. The leakage results from the raising of the fields at the asperities at the polysilicon-SiO(2) interface.

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Reduction of Leakage in SiO(2) Grown on Silicon Films

The leakage of electrons through oxides grown on polycrystalline silicon is unacceptable in device fabrication. The leakage results from the raising of the fields at the asperities at the polysilicon-SiO(2) interface.

The leakage of electrons can be reduced by depositing layers of amorphous silicon instead of polysilicon. One method of depositing such layers is by the chemical vapor deposition of silicon at 500 - 600 degrees K in a plasma. The so deposited film can be doped with B(2)H(6) or PH(3).

Smooth films of silicon are deposited in this manner with conductances of up to 0.1(ohm-cm)/-1/. Oxides grown on such films do not cause asperities, and thus electron leakage is greatly reduced.

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