Browse Prior Art Database

Design Personalization Utilizing Electron Beam Lithography and Data Blockout Technique

IP.com Disclosure Number: IPCOM000084411D
Original Publication Date: 1975-Nov-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 3 page(s) / 30K

Publishing Venue

IBM

Related People

Weed, DR: AUTHOR

Abstract

A major advantage of any electron-beam exposure system for integrated circuit manufacture, is the fast turnaround time from design to final part. This lithography method is especially advantageous for products requiring a high degree of personalized design. Though the turnaround time from design to final produce is reduced, substantial time is also required to layout the personalized design. The technique described hereafter minimizes time needed to redesign the personalized level by using a data blockout procedure.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 54% of the total text.

Page 1 of 3

Design Personalization Utilizing Electron Beam Lithography and Data Blockout Technique

A major advantage of any electron-beam exposure system for integrated circuit manufacture, is the fast turnaround time from design to final part. This lithography method is especially advantageous for products requiring a high degree of personalized design. Though the turnaround time from design to final produce is reduced, substantial time is also required to layout the personalized design. The technique described hereafter minimizes time needed to redesign the personalized level by using a data blockout procedure.

Firstly, a basic design for the personalized level, for convenience indicated level B, contains all the patterns needed to do any personalization. This is illustrated in Fig. 1.

Also, a secondary, or personalized, block level is designed and illustrated in Fig. 2 and delineated B' level. By overlaying the two designs, a third design illustrated in Fig. 3 is created.

If the diagonal lined area and the clear area represents exposed to nonexposed area, and the proper exposure execution by the electron-beam system, a pattern is created on the wafer which has been personalized, illustrated in Fig. 4.

The advantage of this technique is that to create another personalized design, only the block level B' must be redesigned, and since it is only a block design, image placement and size is not critical; therefore, minimizing design time. The technique is applied differently, depending upon the photoresist system used. For example, where a positive resist is used, and referring to Figs. 1 and 2, the B and B' levels having diagonal lines command to the E-beam syste...