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Photoresist Additive Sensitizer

IP.com Disclosure Number: IPCOM000084424D
Original Publication Date: 1975-Nov-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hamel, CJ: AUTHOR [+2]

Abstract

The use of photolithography in the manufacture of integrated semiconductor circuits is conventional. However, a more sensitive resist system which can be developed more rapidly greatly effects manufacturing yield and cost.

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Photoresist Additive Sensitizer

The use of photolithography in the manufacture of integrated semiconductor circuits is conventional. However, a more sensitive resist system which can be developed more rapidly greatly effects manufacturing yield and cost.

To achieve a more sensitive photoresist system, it is believed necessary to chemically modify the resist compound structure or add to an existing resist a speed additive, which will decrease development time and not degrade image quality.

It was found that AZ* 1350J an Azoplate product is enhanced by the addition of hydroquinone, C(6)H(4)(0H)(2). This additive molecule acts in such a fashion that development time is substantially reduced in optical exposures, without any loss in quality.

Other sensitizers which reduce development time also reduce film thickness. This adverse effect has not been observed with hydroquinone.

The amount of additive is determined by the amount of development speed desired.

The following example is illustrative of this principle. DEVELOPMENT TIME (AZ 1:1 DEVELOPER)

THICKNESS LOSS

AZ-1350J - 88 seconds No measurable Change

C(6)H(4)(OH)(2) 0.4g/50.0ml 43 seconds No measurable Change * Trademark of Shipley Company, Inc.

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