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Browse Prior Art Database

Recessed Oxide Isolated Schottky Barrier Diode with Guard Ring

IP.com Disclosure Number: IPCOM000084458D
Original Publication Date: 1975-Nov-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Freed, LE: AUTHOR [+2]

Abstract

Schottky barrier diodes have been previously formed in structures which are dielectrically isolated. U. S. Patent 3,858,231 describes such a dielectrically isolated Schottky barrier diode structure. It has been found that the reverse breakdown voltage characteristics of the Schottky barrier diode may be enhanced, by surrounding the Schottky barrier diode region with a P-type skin.

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Recessed Oxide Isolated Schottky Barrier Diode with Guard Ring

Schottky barrier diodes have been previously formed in structures which are dielectrically isolated. U. S. Patent 3,858,231 describes such a dielectrically isolated Schottky barrier diode structure. It has been found that the reverse breakdown voltage characteristics of the Schottky barrier diode may be enhanced, by surrounding the Schottky barrier diode region with a P-type skin.

In the structure shown in the diagram, Schottky barrier contact 10, forms the Schottky barrier contact with N region 11. The structure is isolated through a combination of recessed oxide regions 12 and P+ isolation diffusion regions 13. Metallic contact 14 forms an ohmic contact with N+ region 15 to complete the Schottky barrier diode structure.

Schottky barrier diodes may be formed utilizing the thermally recessed oxide method described in the above patent, except that just prior to the thermal oxidation to form regions 12, a thin P-type skin 16 is diffused for a small distance through etched recesses in the substrate which are to be thermally oxidized to form the recessed oxide regions 12.

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