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Structures for Protecting Schottky Barrier Diodes from Premature Breakdowns under Reverse Voltage Conditions

IP.com Disclosure Number: IPCOM000084465D
Original Publication Date: 1975-Nov-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 70K

Publishing Venue

IBM

Related People

Calhoun, HC: AUTHOR [+5]

Abstract

Schottky barrier diodes have been known to experience premature breakdowns under reverse voltage conditions. This problem is discussed in detail in the article "Silicon Schottky-Barrier Diode With Near-Ideal I-V Characteristics" by M. P. Lepselter et al., The Bell System Technical Journal, February 1968, page 195. The problem is described as being due to an "edge effect" at the edges of the Schottky contact.

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Structures for Protecting Schottky Barrier Diodes from Premature Breakdowns under Reverse Voltage Conditions

Schottky barrier diodes have been known to experience premature breakdowns under reverse voltage conditions. This problem is discussed in detail in the article "Silicon Schottky-Barrier Diode With Near-Ideal I-V Characteristics" by M. P. Lepselter et al., The Bell System Technical Journal, February 1968, page 195. The problem is described as being due to an "edge effect" at the edges of the Schottky contact.

One expedient is to form a guard ring around the Schottky barrier contact, as shown in the structure of Fig. 1. In this structure, the Schottky contact 10 is formed at the interface of metallic layer 11 and N-type substrate 12. The structure is a portion of an integrated circuit which is isolated by surface silicon dioxide layer 13 and recessed silicon dioxide regions 14. P-type guard ring 15 surrounds the Schottky barrier diode 10, and acts to insure against reverse voltage breakdown of the Schottky barrier diode.

The schematic circuit of the pertinent portion of the structure is shown in Fig. 1A, wherein Schottky diode 10A is shown shunted by a diode 16A which represents PN junction 16 in Fig. 1.

While the structure of Fig. 1 provides an adequate insurance against reverse breakdown due to the edge effect, the Schottky barrier structure 10 is subject to premature breakdown under voltage surges or spikes. When subjected to such pikes, the shunting path...