Browse Prior Art Database

Reactive Ion Etching System

IP.com Disclosure Number: IPCOM000084487D
Original Publication Date: 1975-Nov-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Bondur, JA: AUTHOR

Abstract

Materials such as metal, silicon nitride, silicon, and quartz are remove during integrated circuit manufacturing, using a sputter etching apparatus and a reactive gas such as fluorocarbon. The apparatus does not require a high vacuum and omits the diffusion pump, cold trap and high-vacuum valve normally used in sputtering. A roughing pump is used to control the vacuum and remove reaction by-products.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Reactive Ion Etching System

Materials such as metal, silicon nitride, silicon, and quartz are remove during integrated circuit manufacturing, using a sputter etching apparatus and a reactive gas such as fluorocarbon. The apparatus does not require a high vacuum and omits the diffusion pump, cold trap and high-vacuum valve normally used in sputtering. A roughing pump is used to control the vacuum and remove reaction by-products.

The etching apparatus includes a chamber 1 which contains a RF cathode assembly 2 including shield 13 and cathode plate 3 which supports workpiece 4. Bottom plate 5 of chamber 1 is removable for loading and unloading workpiece 4. Gas inlet 6 and pressure monitor 7 are provided to supply reactive gas to chamber 1 and monitor the pressure in the chamber. The vacuum is controlled by roughing pump 8 which provides for the initial pump down of chamber 1, and which removes reaction by-products. This system is capable of etching such materials as metals, silicon nitride, silicon, thermal oxide and pyro oxide.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]