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Controlling Edge Taper on Semiconductor Etched Images

IP.com Disclosure Number: IPCOM000084584D
Original Publication Date: 1975-Dec-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Malone, RH: AUTHOR [+2]

Abstract

The described technique employs the reaction of an oxidizing acid with a silane treated surface to control the hydrophobicity of the treated surface. Since surface hydrophobicity is related to photoresist adhesion retention during etching with aqueous solutions, various degrees of adhesion failure, i.e., undercut, can be controlled.

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Controlling Edge Taper on Semiconductor Etched Images

The described technique employs the reaction of an oxidizing acid with a silane treated surface to control the hydrophobicity of the treated surface. Since surface hydrophobicity is related to photoresist adhesion retention during etching with aqueous solutions, various degrees of adhesion failure, i.e., undercut, can be controlled.

The degree of adhesion failure determines the slope or edge taper of the etched image. Undercut or taper is increased as adhesion is decreased. The advantage of this method over simple variations in the pretreatment process is improved control of the surface condition.

A specific example is where a thermal oxide surface is treated with hexamethylsisilazane to have an average drop evaporation time (DET) reading of 150 with a range of +/= 20. The surface is next treated with 0.25 mole chromic acid solution to reduce the value to 120 with a range of +/= 10 or less.

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