Browse Prior Art Database

Eliminating of Dewetting of Photoresist on Semiconductor Wafers

IP.com Disclosure Number: IPCOM000084623D
Original Publication Date: 1975-Dec-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Desai, GV: AUTHOR [+3]

Abstract

When applied to the surface of a semiconductor wafer, AZ*1350J type photoresist in a standard solution does not adhere to the surface of metallic contacts formed on the wafer surface. This causes scumming in the contact area during subsequent process steps.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Eliminating of Dewetting of Photoresist on Semiconductor Wafers

When applied to the surface of a semiconductor wafer, AZ*1350J type photoresist in a standard solution does not adhere to the surface of metallic contacts formed on the wafer surface. This causes scumming in the contact area during subsequent process steps.

The problem is solved by diluting the AZ1350J photoresist with AZ thinner in a 1:4 ratio and applying it on the surface of the wafer prior to the application of the 10:1 photoresist. * Trademark of Shipley Company, Inc.

1