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Measuring the Epitaxial Doping and Base Width of Lateral PNP Structures

IP.com Disclosure Number: IPCOM000084638D
Original Publication Date: 1975-Dec-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Berger, HH: AUTHOR

Abstract

Lateral PNP transistors of the same emitter length but of a different lateral base width arranged, for example, in the kerf of a wafer are operated at the same constant temperature and base-emitter voltage V(be). The reciprocals of the measured collector currents I(C) are entered for each transistor over the nominal base width W(BNOM).

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Measuring the Epitaxial Doping and Base Width of Lateral PNP Structures

Lateral PNP transistors of the same emitter length but of a different lateral base width arranged, for example, in the kerf of a wafer are operated at the same constant temperature and base-emitter voltage V(be). The reciprocals of the measured collector currents I(C) are entered for each transistor over the nominal base width W(BNOM).

The slope tan of the resulting straight line 1 is proportional to the quotient of the doping in the intrinsic base and the hole mobility, and thus is a measure for the epitaxial doping in the base. Extrapolation of the straight line 1 to the abscissa gives intersection delta W which is equal to the difference between the nominal and the actual base width W = W(BNOM) - W(B).

Intersection delta W thus is indicative of thephotolithographic difference between the actual base width W(B) and the nominal width (BNOM).

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