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Electrical Test for Dielectric of Capacitor or Field Effect Transistor

IP.com Disclosure Number: IPCOM000084663D
Original Publication Date: 1975-Dec-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Amendola, A: AUTHOR [+3]

Abstract

In an electrical device such as a capacitor or a field-effect transistor an electrical breakdown of a thin-dielectric layer may be caused, by an initial defect in the dielectric that does not show up in the usual manufacturing tests. The initial defect may cause a local distortion of the electric field in the dielectric layer, and thereby cause the migration of metal from the electrodes of the device into the region of the defect. In this way the defect may grow to produce an electrical failure.

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Electrical Test for Dielectric of Capacitor or Field Effect Transistor

In an electrical device such as a capacitor or a field-effect transistor an electrical breakdown of a thin-dielectric layer may be caused, by an initial defect in the dielectric that does not show up in the usual manufacturing tests. The initial defect may cause a local distortion of the electric field in the dielectric layer, and thereby cause the migration of metal from the electrodes of the device into the region of the defect. In this way the defect may grow to produce an electrical failure.

In this test, a capacitor or a field-effect transistor is given a ramp-shaped voltage to produce a gradient of about 0.5 x 10/6/ volts per centimeter above use fields in the dielectric layer. A dielectric without a defect will not be damaged by this test, but a local critical defect will produce a sufficient gradient in the electric field to see an electric failure.

The test is performed at room temperature and the voltage is applied to the test subject for only a few seconds. The test has the additional advantage that it will also produce a failure in a polarized capacitor that has been installed backwards. Failures that are produced during this test are detected by conventional manufacturing tests.

This test can be performed on field-effect transistors after the dielectric has been formed over the silicon chip and before the holes are made in the dielectric for electrical contact. A layer of aluminum...