Browse Prior Art Database

Noninverting High Threshold D/2/L Circuit

IP.com Disclosure Number: IPCOM000084809D
Original Publication Date: 1976-Jan-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Gani, VL: AUTHOR [+2]

Abstract

The D/2/L circuit depicted in the drawing is a high-speed, high-threshold AND gate. The addition of Schottky diode D2 in the emitter circuit of T1 produces a threshold 300 millivolts more positive than that of a standard D/2/L circuit. Transistor T2 transiates the resulting higher levels at the collector of T1 into standard D/2/L levels at the collector of T2.

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Noninverting High Threshold D/2/L Circuit

The D/2/L circuit depicted in the drawing is a high-speed, high-threshold AND gate. The addition of Schottky diode D2 in the emitter circuit of T1 produces a threshold 300 millivolts more positive than that of a standard D/2/L circuit. Transistor T2 transiates the resulting higher levels at the collector of T1 into standard D/2/L levels at the collector of T2.

Diodes D1 and D2 are tantalum Schottky harrier diodes with a forward voltage characteristic of 275 millivolts at 0.1 milliampere. Diodes D3 and D4 are platinum Schottky barrier diodes with a forward voltage characteristic of 600 millivolts at 0.1 milliampere.

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