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Browse Prior Art Database

Package Assambly for Integrated Circuit Devices

IP.com Disclosure Number: IPCOM000084825D
Original Publication Date: 1976-Jan-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Parisi, JA: AUTHOR

Abstract

The trend within the semiconductor industry is to increase the overall area and size of integrated circuit semiconductor devices. In the package, the devices are supported on a module typically made of alumina.

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Package Assambly for Integrated Circuit Devices

The trend within the semiconductor industry is to increase the overall area and size of integrated circuit semiconductor devices. In the package, the devices are supported on a module typically made of alumina.

When silicon integrated circuit semiconductor devices are joined to the substrate by flip chip joining techniques utilizing solder bonding, the difference between the coefficient of expansion of the silicon material of the integrated circuit device and the substrate module presents problems. During the inevitable thermal cycling of the package, internal stresses are generated which may rupture one or more of the solder bonds.

In this package, the substrate module is formed of sapphire. When the silicon integrated circuit devices are joined to metallurgy on the sapphire substrate utilizing flip chip bonding techniques, the stresses commonly generated by differences in coefficient of expansions are minimized or eliminated. It has been determined that the coefficient of expansion of sapphire material quite closely matches that of monocrystalline silicon.

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