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Acid Mixture for Cleaning Wafers With Already Existing Circuit Structures

IP.com Disclosure Number: IPCOM000084840D
Original Publication Date: 1976-Jan-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Briska, M: AUTHOR [+2]

Abstract

Traces of metal adsorbed during the etching of SiO(2) in NH(4)F-HF mixtures are removed from silicon surfaces by a mixture of H(3)PO(4), HNO(3), H(2)O, HF and GENAMIN* 100 (a polyethylene oxy-laurylamine) as surfactant. For this purpose the silicon wafer is immersed in the mixture for one minute and subsequently rinsed in DI water.

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Acid Mixture for Cleaning Wafers With Already Existing Circuit Structures

Traces of metal adsorbed during the etching of SiO(2) in NH(4)F-HF mixtures are removed from silicon surfaces by a mixture of H(3)PO(4), HNO(3), H(2)O, HF and GENAMIN* 100 (a polyethylene oxy-laurylamine) as surfactant. For this purpose the silicon wafer is immersed in the mixture for one minute and subsequently rinsed in DI water.

The etching solution is not only advantageous for cleaning silicon wafer surfaces prior to all diffusion or oxidation steps, but also for silicon wafers with already existing circuit structures, such as transistors and Schottky diodes. The electrical properties and the pipe density of the circuit structures thus cleaned are improved. * Trademark of Farbwerke Hoechst

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