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Browse Prior Art Database

Semiconductor Diode Structure

IP.com Disclosure Number: IPCOM000085048D
Original Publication Date: 1976-Feb-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Lebesnerais, G: AUTHOR

Abstract

This semiconductor diode structure consists of an anode region 10 made during the P+ isolation diffusion step through the epitaxial layer 11 to reach the buried subcollector layer 12, the latter isolates the anode 10 from the P substrate 13. The cathode region 14 is made simultaneously with the emitter regions of other integrated devices.

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Semiconductor Diode Structure

This semiconductor diode structure consists of an anode region 10 made during the P+ isolation diffusion step through the epitaxial layer 11 to reach the buried subcollector layer 12, the latter isolates the anode 10 from the P substrate
13. The cathode region 14 is made simultaneously with the emitter regions of other integrated devices.

Isolation between different diodes of this kind is achieved due to the epitaxial layer 11.

The advantages of this diode are:
1. Small area, since no additional P+ isolation rings are needed

to isolate different diodes,
2. High-current capability with no parasitic device, since the

parasitic transistor formed by N epitaxial layer 11 - P+

isolation region - N+ anode region 14 has a gain close to

zero, due to high-doping concentration of the P+ region mainly

near the top surface of this region,
3. Low-serial resistance.

A P phase diffusion 15 may be employed to avoid overetching too much of the oxide at the place of the anode contact. This diode is fully compatible with standard bipolar processes.

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