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Browse Prior Art Database

Nonchemical Stripping Process for Photoresists

IP.com Disclosure Number: IPCOM000085205D
Original Publication Date: 1976-Mar-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brenneman, BF: AUTHOR [+3]

Abstract

A positive, diazo ketone sensitized phenol-formaldehyde novolak resin resist layer is removed from a semiconductor wafer, by baking the layer for about 30 minutes at a temperature of from about 180 degrees C to 500 degrees C. The baked wafer is then placed in boiling water for about 10 minutes until the resist is removed. The wafer is then rinsed in water.

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Nonchemical Stripping Process for Photoresists

A positive, diazo ketone sensitized phenol-formaldehyde novolak resin resist layer is removed from a semiconductor wafer, by baking the layer for about 30 minutes at a temperature of from about 180 degrees C to 500 degrees C. The baked wafer is then placed in boiling water for about 10 minutes until the resist is removed. The wafer is then rinsed in water.

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