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Resist Stripping Process Using Caro's Acid

IP.com Disclosure Number: IPCOM000085206D
Original Publication Date: 1976-Mar-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bergin, BK: AUTHOR [+2]

Abstract

Resist residues can result after resist stripping when the resist has been used as a mask for ion implantation. This results in a highly cross-linked resist.

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Resist Stripping Process Using Caro's Acid

Resist residues can result after resist stripping when the resist has been used as a mask for ion implantation. This results in a highly cross-linked resist.

The stripping process employs Caro's acid which is a solution of peroxymonosulfuric acid in sulfuric acid with a solvent soak of the resist, either prior to or between Caro's acid treatment of the resist. Suitable solvents are of low-molecular weight and contain H and OH groups or H and carbonyl groups, which act to swell the resist and facilitate dehydration and removal of the resist. Examples of such solvents are; butanol, isopropanol, pentanol, and hexanol.

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