Browse Prior Art Database

End Point Determination of in Situ Sputter Cleaning

IP.com Disclosure Number: IPCOM000085207D
Original Publication Date: 1976-Mar-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Bauer, HJ: AUTHOR [+2]

Abstract

The principle of secondary ion mass analysis is used to monitor Al(2)O(3) removal during the sputter cleaning of semiconductor wafers prior to evaporation.

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End Point Determination of in Situ Sputter Cleaning

The principle of secondary ion mass analysis is used to monitor Al(2)O(3) removal during the sputter cleaning of semiconductor wafers prior to evaporation.

As illustrated, the system includes quadrupole mass filter and detector 1 mounted in series with electrostatic lens 2. Lens 2 permits the selection of secondary ions which are produced from a specific area on wafer 3 as a result of ion milling gun 4, which is used to sputter clean wafer 3.

The ions passing through filter 1, which can be set for the mass of interest, for example Al(2)O(3), are collected and monitored as a function of sputtering time. Following the cleaning, material from evaporation source 5 is coated onto wafer 3.

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