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Schottky Diode Barrier Height Stabilization Method

IP.com Disclosure Number: IPCOM000085214D
Original Publication Date: 1976-Mar-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bauer, HJ: AUTHOR [+4]

Abstract

Al/Cu/Si-Si Schottky barrier diodes having reproducibly high forward conduction characteristics, i.e., a barrier height of about 0.80 volt, are fabricated by removing the native oxide on the n-type silicon substrate prior to Al/Cu/Si deposition.

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Schottky Diode Barrier Height Stabilization Method

Al/Cu/Si-Si Schottky barrier diodes having reproducibly high forward conduction characteristics, i.e., a barrier height of about 0.80 volt, are fabricated by removing the native oxide on the n-type silicon substrate prior to Al/Cu/Si deposition.

Al/Cu/Si-Si Schottky diodes made by sintering are nonuniform and unstable, due to the physical nature of the "p" layer formed by the Al doped Si on the "n" Si substrate. It is believed that mesas or mounds grow in the p layer because of the nonhomogeneous nature of the underlying native oxide on the substrate. The resulting variations in p-layer thickness cause nonuniform Schottky diode barrier height.

The mesas are avoided by either of two techniques. In the first technique, a few hundred angstroms of Al are deposited and sintered at about 400 degrees C to reduce the native oxide prior to Al/Cu/Si deposition. Alternatively, the native oxide may be removed by an in situ sputter cleaning process. In both cases, nucleation sites for mesa growth are eliminated prior to the deposition of the Si doped Al.

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