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Schottky Barrier Diode Antisaturation Clamp

IP.com Disclosure Number: IPCOM000085216D
Original Publication Date: 1976-Mar-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Dennison, RT: AUTHOR [+4]

Abstract

A well-controlled Schottky barrier diode (SBD) forward voltage drop (VF) on SBD clamped transistors is often extremely important. The SBD clamp shown in the figure provides improved absolute and tracking tolerances.

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Schottky Barrier Diode Antisaturation Clamp

A well-controlled Schottky barrier diode (SBD) forward voltage drop (VF) on SBD clamped transistors is often extremely important. The SBD clamp shown in the figure provides improved absolute and tracking tolerances.

The clamp shown is defined on two sides by contact opening F and on two sides by base diffusion E. The addition of the base diffusion opposite the transistor base, eliminates alignment induced absolute and tracing tolerance effects with only a slight increase in capacitance.

The diode area without the added p-base diffusion is dependent on E-to-F alignment, and tracking between oppositely oriented clamped device is highly dependent on E-to-F alignment. The structure shown eliminates these effects.

Also, the diode layout depicted has an area which is dependent on two independent process steps. Thus, the SBD area is 'statistically' better than that defined by a single process step.

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