Browse Prior Art Database

Double Coated Wafers for Mask and Device Fabrication

IP.com Disclosure Number: IPCOM000085343D
Original Publication Date: 1976-Mar-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Feder, R: AUTHOR [+3]

Abstract

This is a method for fabricating high-aspect ratios by lithographic techniques, using any radiation that is capable of being transmitted through a substrate or membrane.

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Double Coated Wafers for Mask and Device Fabrication

This is a method for fabricating high-aspect ratios by lithographic techniques, using any radiation that is capable of being transmitted through a substrate or membrane.

The aspect ratio is built up in the following manner: a resist is applied to both sides of a substrate or membrane; an appropriate mask is projected on the double-coated substrate; after development, the resist pattern is metallized or subject to any process. The process steps are shown in Figs. 1-4.

The configuration shown in Fig. 4 can either be used as a mask/device or, if it is a negative configuration, the substrate or membrane can be etched away to allow a greater transmission of radiation as a mask. This technique will allow the aspect ratio to be doubled when compared with techniques of spinning resist on one side.

In Fig. 1 radiation is shone along lines 10 through a mask 8, which includes transparent substrate 11 and apertures 13 between absorber material 12 which is opaque to the radiation. A substrate 14 of transparent material has been coated with unexposed resist layers 15 and 16 on its top and bottom. The radiation exposes both layers 15 and 16 when it shines through the resist 15 and substrate 14 via apertures 13 in mask 8.

In Fig. 2, the resist 15 and 16 is developed to open apertures 17.

In Fig. 3, metal 18 is deposited upon substrate 14 in the apertures 17.

In Fig. 4, resist 15 and 16 is removed to leave a mask which has doub...