Browse Prior Art Database

Vapor Phase Deposition Apparatus for Ga(x)Al(1-x)As

IP.com Disclosure Number: IPCOM000085374D
Original Publication Date: 1976-Mar-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Bachem, KH: AUTHOR

Abstract

An apparatus has been devised for epitaxial deposition of Al(x)Ga(1-x)As by chemical vapor phase deposition (CVD). The deposition system permits the growth of any solid composition ranging from x=0 to x=1.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 60% of the total text.

Page 1 of 2

Vapor Phase Deposition Apparatus for Ga(x)Al(1-x)As

An apparatus has been devised for epitaxial deposition of Al(x)Ga(1-x)As by chemical vapor phase deposition (CVD). The deposition system permits the growth of any solid composition ranging from x=0 to x=1.

High-purity epitaxial films of Al(x)Ga(1-x)As with controlled composition are needed to fabricate devices such as light-emitting diodes (LEDs), lasers, solar cells, etc. First attempts to grow AlAs and Al(x)Ga(1-x)As by CVD suffered from experimental difficulties which resulted mainly from the following causes:

1) The gaseous aluminum compounds are highly corrosive at high temperature and react with quartz, the preferred reactor construction material, causing an undesired contamination of the AlAs and Al(x)Ga(1-x)As with silicon.

2) The oxidation of the Al source leads to the formation of an aluminum oxide that covers the Al source, which impedes the desired reaction between Al and Hx or AlX(3) (where X stands for any halogen except F).

3) Nonuniform mixing of the Ga and Al containing gases.

The figure shows the proposed reactor that avoids the three difficulties noted above. The reactor consists of an outer quartz tube 2 and an inner reaction chamber 4, made from materials which are not attacked by the gaseous Al compounds and the Al melt. The space 6 between reaction chamber 4 and the quartz jacket 2 is flushed with an inert gas. The Al source 8 is designed as a bubbler by means of which the effect of any al...