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NiFe Films Mixed With SiO(2) for Improved Adhesion

IP.com Disclosure Number: IPCOM000085380D
Original Publication Date: 1976-Mar-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+3]

Abstract

A method is provided for improving the adhesion of very thin NiFe films onto SiO(2) wafers.

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NiFe Films Mixed With SiO(2) for Improved Adhesion

A method is provided for improving the adhesion of very thin NiFe films onto SiO(2) wafers.

In the fabrication of thin-film devices on Si0 surfaces and particularly when manufacturing magnetic bubble circuit elements, it is often necessary to deposit a 300 Angstrom thick film of permalloy onto a SiO(2) substrate. The NiFe serves as a base onto which are deposited other metallurgy. However, because of the small areas involved, it is difficult to make the NiFe adhere strongly to the SiO(2). In order to improve the adhesion properties of NiFe to SiO(2), high-bias RF sputtering is relied upon.

The SiO(2) base is held at ~ - 60 volts and the pressure in the sputtering chamber is about 10/-8/ torr. The sputtering process results in the removal of Si and O from the SiO(2) wafer, which removed Si and O mixes with the NiFe sputtered film, creating an alloy of Fe, Ni, O and Si wherein Si comprises 15 atomic % and O about 30 atomic % of the mixture. Such mixture serves as an interface between the Si0 surface and the completely sputtered NiFe film.

As a consequence of the RF sputtering of NiFe onto SiO(2), corrosion resistance of NiFe films is better than for pure NiFe films, the magnetoresistive effect of the NiFe film increases and the adhesion is enhanced.

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