Browse Prior Art Database

Noise Isolation by Field Shield Segmentation

IP.com Disclosure Number: IPCOM000085428D
Original Publication Date: 1976-Apr-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Scribner, RN: AUTHOR

Abstract

In integrated circuit semiconductor devices, especially one-device cells, differential noise, created by the discharging of decoder circuits, will be coupled into the field shield. The field shield carries the noise to and couples it into the bit lines, and from there it goes to the sense latch. The latch treats the noise as a legitimate signal, and hence the noise can cause the latch to set in the wrong direction.

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Noise Isolation by Field Shield Segmentation

In integrated circuit semiconductor devices, especially one-device cells, differential noise, created by the discharging of decoder circuits, will be coupled into the field shield. The field shield carries the noise to and couples it into the bit lines, and from there it goes to the sense latch. The latch treats the noise as a legitimate signal, and hence the noise can cause the latch to set in the wrong direction.

This situation is corrected by physically segmenting the field shield which services the decoders is electrically isolated from that which services the latch. The drawing illustrates this correction where 1 is the bulk substrate, 2 the insulating oxide thereon and the polysilicon field shield 3 having an oxide covering 4. The area 5 is the space for isolated circuits and the area 6 is the noisy circuit area. Contact metallurgy is shown at 7 and the areas interconnected thereby as illustrated.

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