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P Channel MOSFET Testing Isolation Amplifier

IP.com Disclosure Number: IPCOM000085431D
Original Publication Date: 1976-Apr-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Selleck, JE: AUTHOR

Abstract

Described is an isolation amplifier that can be used as a simple low-capacitance test probe for bipolar circuits. The isolation amplifier has high-input impedance for sensing and a low-reverse impedance for writing or preconditioning.

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P Channel MOSFET Testing Isolation Amplifier

Described is an isolation amplifier that can be used as a simple low- capacitance test probe for bipolar circuits. The isolation amplifier has high-input impedance for sensing and a low-reverse impedance for writing or preconditioning.

This isolation amplifier preconditions the input to the output through a low- impedance reset transistor 10, when a reset pulse is applied to the gate 11 of transistor 10. This occurs because the source of transistor 10 is connected to the output and the drain is connected to the gate 12 of the high-impedance source follower transistor 13, whose drain is coupled to voltage V1 and whose source is coupled to the output.

If the preconditioning pattern is not fixed, then this isolation amplifier allows the pattern to be applied at the output and fed back via the low-impedance reset transistor 10.

This device can be made using bipolar processing in a pocket formed in the epitaxial layer.

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