Browse Prior Art Database

Structure for Cooling by Nucleate Boiling

IP.com Disclosure Number: IPCOM000085486D
Original Publication Date: 1976-Apr-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Riseman, J: AUTHOR

Abstract

Semiconductor devices of certain types generate substantial heat. One method for removing this heat, before it causes damage to the device, is by a liquid which is allowed to boil. The structure of the figure provides nucleation sites 5 upon the back side of each semiconductor device 6 so as to improve cooling efficiency.

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Structure for Cooling by Nucleate Boiling

Semiconductor devices of certain types generate substantial heat. One method for removing this heat, before it causes damage to the device, is by a liquid which is allowed to boil. The structure of the figure provides nucleation sites 5 upon the back side of each semiconductor device 6 so as to improve cooling efficiency.

The structure in the figure can be made by the following procedure:

1. On a 5 mil polycrystalline or monocrystalline

wafer form a silicon dioxide coating on both

sides and the edges.

2. Form a pattern of matched openings in the silicon

dioxide on both sides of the wafer.

3. Etch holes in the wafer using silicon dioxide as

a mask. Etching can be done in any suitable

etching solution.

4. The wafer having a pattern of very small holes

5 is adhered to the wafer, by solder layer 7.

The wafer contains semiconductor devices, not

shown, in its surface 6.

5. The wafer is then diced to give dies containing

integrated circuits with a back side deliberately

deliberately designed to optimize nucleate boiling.

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