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Gettering of Silicon Substrates

IP.com Disclosure Number: IPCOM000085502D
Original Publication Date: 1976-Apr-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Clark, LO: AUTHOR [+2]

Abstract

The gettering of semiconductor wafers prior to any heat treatment steps such as diffusion or oxidation, followed by a complete removal of the gettering material prior to subsequent processing, gives increased yield of the wafers.

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Gettering of Silicon Substrates

The gettering of semiconductor wafers prior to any heat treatment steps such as diffusion or oxidation, followed by a complete removal of the gettering material prior to subsequent processing, gives increased yield of the wafers.

In prior techniques, which involve leaving the gettering material on the wafer during semiconductor processing cycles, the material tends to be readmitted into the wafer during cycles requiring high temperatures.

Blanket boron or phosphorus diffusions as the gettering materials are very effective.

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