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Schottky Barrier Diode Processing

IP.com Disclosure Number: IPCOM000085507D
Original Publication Date: 1976-Apr-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bhatia, HS: AUTHOR [+2]

Abstract

In the fabrication of Schottky barrier diodes (SBDs) which rely on the completion of Pt reaction with Al, the Pt-Al reaction is complete at 400 Degrees C in 1 hour. However, this reaction rate also depends upon the Si content in Al-Cu metallurgy. If the Si content is more than 2 percent, then the rate of Pt-Al reaction progressively becomes slower at 400 Degrees C.

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Schottky Barrier Diode Processing

In the fabrication of Schottky barrier diodes (SBDs) which rely on the completion of Pt reaction with Al, the Pt-Al reaction is complete at 400 Degrees C in 1 hour. However, this reaction rate also depends upon the Si content in Al-Cu metallurgy. If the Si content is more than 2 percent, then the rate of Pt-Al reaction progressively becomes slower at 400 Degrees C.

If Si content is more than 15 percent, then the Pt-Al reaction is slow enough that even after sintering for 4 hours at 400 Degrees C, a true Pt SBD exists. This phenomenon is useful if it is desired to have a true Pt SBD and it cannot be obtained without having a barrier, e.g., Cr between the Al and Pt. Even with an excess of Si, the reaction mechanism is such that the Al-Pt reacts completely within one hour if sintered at 450 Degrees C. This takes care of any incomplete Al-Pt reaction.

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