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Controlled State Bubble Splitter

IP.com Disclosure Number: IPCOM000085549D
Original Publication Date: 1976-Apr-01
Included in the Prior Art Database: 2005-Mar-02
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Hannon, DM: AUTHOR [+2]

Abstract

A device and method for generating a bubble with the desired state is described. The method involves the chopping of stripe domains into bubbles while controlling the in-plane field in a garnet film with a capped layer. With an in-plane field of 80 to 120 [Oe], an S=0 bubble is generated. With a very low in-plane field, an S=1 bubble is generated. The in-plane field used to control the state may be externally applied or may be locally applied.

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Controlled State Bubble Splitter

A device and method for generating a bubble with the desired state is described. The method involves the chopping of stripe domains into bubbles while controlling the in-plane field in a garnet film with a capped layer. With an in-plane field of 80 to 120 [Oe], an S=0 bubble is generated. With a very low in- plane field, an S=1 bubble is generated. The in-plane field used to control the state may be externally applied or may be locally applied.

Fig. 1 is a top view of the device which uses an externally applied in-plane field and Fig. 2 is a cross-sectional view of the device which uses a locally applied in-plane field. In both cases it is assumed that the device has an in-plane field of about 40 to 60 [Oe] applied at all times except during generation.

In Fig. 1, current is passed through the chopping or splitting conductor 10 to split off the end portion 12 of stripe domain 14. The external in-plane field 15 is raised (or lowered) concurrently when an S=0 (S=1) state is desired. The state of bubbles 16, 18, 20, 22 as well as other bubbles, not shown, is not changed by the generation step because they are not moved during this step.

In Fig. 2 on top of the garnet layer 30 is an exchange coupled layer 32, for example, an ion-implanted layer. The splitting or chopping conductor 34 rests on top of the layer 32. A spacer 36 separates conductor 38, the source of the local in-plane field, from the conductor 34 and layer 32. '

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